MT53E128M32D2DS-053 vs MT53D512M32D2DS-053 WT:D Vergleich
Detaillierter Direktvergleich von MT53E128M32D2DS-053 von Micron Technology und MT53D512M32D2DS-053 WT:D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
MT53E128M32D2DS-053 ✓ AktivMicron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ AktivSpezifikationsvergleich
| Parameter | MT53E128M32D2DS-053 | MT53D512M32D2DS-053 WT:D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $6,05 |
| Speichertyp | Mobile LPDDR4 / LPDDR4X SDRAM (unified) | SDRAM - Mobile LPDDR4 |
| Density | 4 Gbit | — |
| Speicherorganisation | 128M x 32 | 512M x 32 |
| Datenrate | 1.866 GHz (1866 Mbps/pin) | — |
| Speed Grade | -053 | -053 |
| Gehäuse | 200-ball WFBGA (10 x 14.5 mm) | 200-WFBGA (10 mm x 14.5 mm) |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| VDD | [DATA_NEEDED: VDD supply voltage] | — |
| Configuration | DDP (double-die package) | — |
| Montageart | Surface Mount | Surface Mount |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available | — |
| RoHS-Status | Compliant | RoHS Compliant (per DigiKey listing) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +85C |
| Refresh | [DATA_NEEDED: refresh mode 8x/16x] | Auto refresh and self refresh |
| Access Type | Synchronous, bank-group burst | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Speichergröße | — | 16 Gbit (2 GB) |
| Clock Frequency / Data Rate | — | 1.866 GHz (1866 MT/s) |
| Die Configuration | — | DDP (Double Die Package) |
| Eigenschaften | — | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Datenbusbreite | — | 32 bit |
| Memory Interface | — | Parallel, LPDDR4 |
| Self-Refresh | — | Auto self-refresh with temperature-compensated refresh |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |